Strained quaternary GaInAsP quantum well lasee emitting at 1.5 μm grown by gas source molecular beam epitaxy
- 1 May 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 120 (1-4), 180-183
- https://doi.org/10.1016/0022-0248(92)90387-x
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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