Magnesium doping of efficient GaAs and Ga0.75In0.25As solar cells grown by metalorganic chemical vapor deposition
- 15 October 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (8), 895-897
- https://doi.org/10.1063/1.95405
Abstract
Magnesium has been substituted for zinc in GaAs and Ga0.75In0.25As solar cells grown by metalorganic chemical vapor deposition (MOCVD). Bis(cyclopentadienyl)magnesium (Cp2Mg) is used as the MOCVD transport agent for Mg. Full retention of excellent material quality and efficient cell performance results. The substitution of Mg for Zn would enhance the abruptness and reproducibility of doping profiles and facilitate high‐temperature processing and operation, due to the much lower diffusion coefficient of Mg, relative to Zn, in these materials.Keywords
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