GaSb heterostructures grown by MOVPE
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 93 (1-4), 70-78
- https://doi.org/10.1016/0022-0248(88)90508-8
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Growth of GaSb by MOVPESemiconductor Science and Technology, 1988
- Properties of thin strained Ga(As,P) layersPhysical Review B, 1988
- Photoluminescence studies of LPE AlxGa1-xSbSemiconductor Science and Technology, 1987
- Optical investigations of a GaSb-AlSb single quantum wellSolid State Communications, 1987
- Epitaxie en phase vapeur par pyrolyse d'organométalliques (EPVOM) des solutions solides ternaires Ga1-xAl xSb, Ga1-xInxSb et GaAsySb1-y sur substrats de GaSbRevue de Physique Appliquée, 1987
- (InAs)1(GaAs)1 Layered Crystal Grown on (100)InP by MOCVDJapanese Journal of Applied Physics, 1985
- Energy band-gap shift with elastic strain in GaxIn1−xP epitaxial layers on (001) GaAs substratesJournal of Applied Physics, 1983
- Growth of AlSb on insulating substrates by metal organics chemical vapour depositionJournal of Crystal Growth, 1980
- The Use of Metalorganics in the Preparation of Semiconductor Materials: VII . Gallium AntimonideJournal of the Electrochemical Society, 1979
- Undopedn-Type GaSb Grown by Liquid Phase EpitaxyJapanese Journal of Applied Physics, 1974