Photoluminescence studies of LPE AlxGa1-xSb

Abstract

Photoluminescence spectra have been investigated for LPE-grown Al_xGa_1-xSb at 77 K, and five emission peaks observed. These emissions have been interpreted by taking into account one shallow acceptor level and two native defect levels in the energy band diagram. The shallow acceptor level is located at about 30 meV above the valence band, which may be due to the complex defect V_GaGa_Sb. The native defects introduce two levels, which are about 90 meV below the Gamma ₁ minimum and about 160 meV below the L₁ minimum. The defect levels may be related to complex defects of the Sb vacancy.