Epitaxial GaAs grown directly on (100)Si by low pressure MOVPE using low temperature processing
- 1 September 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 77 (1-3), 503-508
- https://doi.org/10.1016/0022-0248(86)90344-1
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxyJournal of Applied Physics, 1985
- Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVDJapanese Journal of Applied Physics, 1984
- Reduced pressure MOVPE growth and characterization of GaAs/GaAlAs heterostructures using a triethylgallium sourceJournal of Crystal Growth, 1984
- Growth of GaAs on Si by MOVCDJournal of Crystal Growth, 1984
- Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)Applied Physics Letters, 1984
- Molecular beam epitaxial growth of GaP on SiJournal of Applied Physics, 1984
- Antiphase domain structures in GaP and GaAs epitaxial layers grown on Si and GeJournal of Crystal Growth, 1977
- Temperature and Orientation Dependence of Plastic Deformation in GaAs Single Crystals Doped with Si, Cr, or ZnJournal of the American Ceramic Society, 1975
- Oriented Growth of Semiconductors. III. Growth of Gallium Arsenide on GermaniumJournal of Applied Physics, 1966