Secondary sensitivities and stability of ultrasensitive silicon pressure sensors
- 1 January 1990
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Experimental results on the characterization of secondary effects in boron-doped silicon membranes are presented. Capacitive pressure sensors were fabricated with and without a variety of dielectrics on the diaphragms and were tested over pressure and temperature. The temperature coefficient of sensitivity (TCS) and zero pressure temperature coefficient of offset (TCO) were found to be as much as an order of magnitude higher than previously reported values; this is due to the strong dependence of pressure sensitivity on internal stress and the large mismatches in thermal expansion coefficients between silicon and dielectrics. Creep and fatigue affected the offset by <0.2% full scale, and the change in pressure sensitivity was insignificant; hysteresis observed on all devices was also <0.2% full scale. The results indicate that it may be possible to extend the pressure range by an order of magnitude, which would increase the resolution from 10 to 16 b.Keywords
This publication has 10 references indexed in Scilit:
- Mechanical property measurements of thin films using load-deflection of composite rectangular membranePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A novel technique and structure for the measurement of intrinsic stress and Young's modulus of thin filmsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- An ultrasensitive silicon pressure-based flowmeterPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Scaling and dielectric stress compensation of ultrasensitive boron-doped silicon microstructurePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Thermally excited silicon microactuatorsIEEE Transactions on Electron Devices, 1988
- An ultraminiature solid-state pressure sensor for a cardiovascular catheterIEEE Transactions on Electron Devices, 1988
- Scaling limits in batch-fabricated silicon pressure sensorsIEEE Transactions on Electron Devices, 1987
- (100) Silicon Etch‐Rate Dependence on Boron Concentration in Ethylenediamine‐Pyrocatechol‐Water SolutionsJournal of the Electrochemical Society, 1984
- A batch-fabricated silicon capacitive pressure transducer with low temperature sensitivityIEEE Transactions on Electron Devices, 1982
- Elastic stiffness and thermal expansion coefficient of BN filmsApplied Physics Letters, 1980