Arc annealing of BF+2 implanted silicon by a short pulse flash lamp
- 1 January 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (1), 73-76
- https://doi.org/10.1063/1.91279
Abstract
Step‐junction diodes are obtained from BF+2 implanted silicon irradiated by a single pulse of light from a flash lamp. The FWHM is 100 μs with energy densities ranging from 12.4 to 20.6 J/cm2. The sheet resistance and the I‐V characteristic have been used to confirm the annealing process.Keywords
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