C-V characteristics of SiC metal-oxide-semiconductor diode with a thermally grown SiO2 layer

Abstract

C‐V characteristics of Al‐SiO₂‐SiC metal‐oxide‐semiconductor structures have been measured at low and high frequencies in the dark and under illumination. The oxide layer (432 Å thick) is prepared by thermal oxidation of liquid phase expitaxially grown n‐type 6H‐SiC using wet oxygen at 1000 °C. The accumulation, depletion, and inversion regions are clearly observed in the C‐V characteristics under illumination. In the dark the inversion does not occur, probably owing to the absence of minority carriers due to the large band gap (3.0 eV) of 6H‐SiC. The experimental results are briefly discussed and compared with theoretical curves.