A monolithic integration of GaAs/GaAlAs bipolar transistor and heterostructure laser
- 15 July 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (2), 211-213
- https://doi.org/10.1063/1.91828
Abstract
A GaAlAs double‐heterostructure laser has been monolithically integrated with a heterojunction bipolar transistor on a GaAs substrate. Integration is achieved by means of a mutually compatible structure formed by Be ion implantation. Typical pulsed threshold currents for the laser are 60 mA, and the transistors have a typical common‐emitter current gain of 900.Keywords
This publication has 6 references indexed in Scilit:
- Be-implanted (GaAl)As stripe geometry lasersApplied Physics Letters, 1980
- Design and evaluation of a planar GaAlAs-GaAs bipolar transistorElectronics Letters, 1980
- Monolithic integration of an injection laser and a metal semiconductor field effect transistorApplied Physics Letters, 1979
- (GaAl)As/GaAs heterojunction phototransistors with high current gainJournal of Applied Physics, 1977
- (GaAl)As-GaAs heterojunction transistors with high injection efficiencyJournal of Applied Physics, 1975
- GaAsGaAlAs heterojunction transistor for high frequency operationSolid-State Electronics, 1972