Preparation and dielectric properties of Si3N4 thin films
- 5 March 1982
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 89 (1), 95-99
- https://doi.org/10.1016/0040-6090(82)90485-0
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- A low temperature process for the reactive formation of Si3N4 layers on InSbThin Solid Films, 1980
- Minority-carrier injection and extraction in-type germaniumPhysical Review B, 1980
- C/V measurements of m.i.s. structures on n-InSb formed by room temperature reactive deposition of Si3N4Electronics Letters, 1980
- Electrical properties of Si-N films deposited on silicon from reactive plasmaJournal of Applied Physics, 1978
- The ‘universal’ dielectric responseNature, 1977
- Silicon-gate technologyIEEE Spectrum, 1969
- The Preparation and Properties of Thin Film Silicon-Nitrogen Compounds Produced by a Radio Frequency Glow Discharge ReactionJournal of the Electrochemical Society, 1967