Numerical study of nonequilibrium electron transport in AlGaAs/GaAs heterojunction bipolar transistors
- 17 July 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (3), 250-252
- https://doi.org/10.1063/1.101921
Abstract
We have simulated numerically the dynamics of nonequilibrium electron transport in n‐p‐n AlGaAs/GaAs heterojunction bipolar transistors. We show that collector transit time is intimately related to base transport dynamics and high p‐type carrier concentration in a thin base improves device performance. However, even for a very thin collector depletion region, the small Γ‐X intervalley energy separation in GaAs places severe constraints on efficient collector transport.Keywords
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