Extreme nonequilibrium electron transport in heterojunction bipolar transistors
- 27 June 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (26), 2247-2249
- https://doi.org/10.1063/1.99545
Abstract
We use hot‐electron spectroscopy to demonstrate the existence of extreme nonequilibrium electron transport in the base of n‐p‐n heterojunction bipolar transistors. In the device, electrons are tunnel injected into a thin (∼300 Å wide), degenerately doped, p‐type GaAs base.Keywords
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