Physical and electrical properties of plasma-grown oxide on Ga0.64Al0.36As

Abstract

Auger, Rutherford backscattering, and x‐ray‐diffraction measurements show that plasma‐grown oxide films on Ga_0.64Al_0.36As are amorphous, uniform in composition with depth, and possess very sharp oxide‐semiconductor interfaces. The electrical properties (I‐V, C‐V) of these films are such that they may be used for surface passivation of optoelectronic devices and as dielectric layers in electronic device fabrication.