Significance of the channeling surface peak in thin-film analysis
- 15 January 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (2), 93-94
- https://doi.org/10.1063/1.89948
Abstract
The surface scattering of MeV He+ ions channeled along Si〈100〉 from clean well‐characterized Si(100) surfaces is measured. The surface peak intensity, along with other values in the literature, is shown to obey simple scaling laws. For the study of very thin films by backscattering the contribution made by this surface scattering can be important.Keywords
This publication has 8 references indexed in Scilit:
- Surface Scattering from W Single Crystals by MeVIonsPhysical Review Letters, 1977
- Analysis of surface layers by the channeling technique: Beam energy dependenceApplied Physics Letters, 1975
- Stoichiometry of thin silicon oxide layers on siliconApplied Physics Letters, 1974
- Line-shape extraction analysis of silicon oxide layers on silicon by channelling effect measurementsThin Solid Films, 1973
- Monte Carlo Channeling CalculationsPhysical Review B, 1971
- Comparison of Average-Potential Models and Binary-Collision Models of Axial Channeling and BlockingPhysical Review B, 1970
- Vibrational Amplitudes in Germanium and SiliconPhysical Review B, 1962
- Structure and Adsorption Characteristics of Clean Surfaces of Germanium and SiliconThe Journal of Chemical Physics, 1959