The effects of different implantation and annealing temperatures on the structural and chemical properties of high dose oxygen-ion-implanted silicon
- 1 September 1985
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 131 (3-4), 233-244
- https://doi.org/10.1016/0040-6090(85)90143-9
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Effects of implantation temperature on the properties of buried oxide layers in silicon formed by oxygen ion implantationApplied Physics Letters, 1984
- An AES Investigation into the Phase Distribution of Ion‐Implanted Oxygen in Silicon N‐Channel DevicesJournal of the Electrochemical Society, 1984
- Temperature dependence of Hall mobility and electrical conductivity in SIMOX filmsElectronics Letters, 1984
- SIMS analysis of silicon on insulator structures formed by high-dose O+ implantation into siliconNuclear Instruments and Methods in Physics Research, 1983
- The Top Silicon Layer of SOI Formed by Oxygen Ion ImplantationIEEE Transactions on Nuclear Science, 1983
- The effects of impurity diffusion and surface damage on oxygen precipitation in siliconJournal of Applied Physics, 1983
- Precipitation of oxygen in silicon: Some phenomena and a nucleation modelJournal of Applied Physics, 1981
- Characteristics of MOSFETs fabricated in silicon-on-insulator material formed by high-dose oxygen ion implantationElectronics Letters, 1981
- C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into siliconElectronics Letters, 1978