SIMS analysis of silicon on insulator structures formed by high-dose O+ implantation into silicon
- 15 December 1983
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 218 (1-3), 573-578
- https://doi.org/10.1016/0167-5087(83)91045-1
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
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