Fabrication of a GaAs quantum-well-wire structure by Ga focused-ion-beam implantation and its optical properties

Abstract

A quantum-well wire was fabricated with use of local intermixing of a GaAs-${\mathrm{Al}}_{\mathrm{x}}$ ${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$As single-quantum-well epitaxial layer induced by Ga focused-ion-beam implantation. Fine structures were observed in low temperature photoluminescence and photoluminescence excitation spectra. These fine structures are explained by the density of states specific to the two-dimensionally confined carrier system.