Behavior of Al–Al2O3–Al single-electron transistors from 85 mK to 5 K
- 4 May 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (18), 2268-2270
- https://doi.org/10.1063/1.121334
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- 100-K Operation of Al-Based Single-Electron TransistorsJapanese Journal of Applied Physics, 1996
- Metal based single electron transistors operating at several KelvinJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Arrays of normal metal tunnel junctions in weak Coulomb blockade regimeApplied Physics Letters, 1995
- Application of single electron tunneling: Precision capacitance ratio measurementsApplied Physics Letters, 1995
- New high power planar gate GaAs MESFETs with improved gate-drain breakdown voltageElectronics Letters, 1995
- Metrological accuracy of the electron pumpPhysical Review Letters, 1994
- Self-heating in the Coulomb-blockade electrometerJournal of Applied Physics, 1993
- Direct observation of macroscopic charge quantizationZeitschrift für Physik B Condensed Matter, 1991
- Offset masks for lift-off photoprocessingApplied Physics Letters, 1977