SiO/sub 2/ degradation with charge injection polarity
- 1 November 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 14 (11), 512-514
- https://doi.org/10.1109/55.257999
Abstract
We have investigated gate oxide degradation in metal-oxide-semiconductor (MOS) devices as a function of high-field constant-current stress for charge injection from both gate and substrate. The two polarities are asymmetric: gate injection, where the substrate Si-SiO/sub 2/ interface is the collecting electrode for the energetic electrons, shows a higher rate of interface-state generation ( Delta D/sub it/) and lower charge-to-breakdown Q/sub bd/. Thus the collecting electrode interface, which suffers primary damage, emerges as a critical degradation site in addition to the injecting electrode interface, which has been the traditional focus. Consistent with a physical-damage model of breakdown, we demonstrate that interfacial degradation is an important precursor of breakdown, and that the nature of breakdown-related damage is physical, such as trap-generation by broken bonds.Keywords
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