Near-infrared photoluminescence of high-resistivity epitaxial GaAs and InP and of epitaxial GaAs on Si
- 1 May 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 25 (5), 1025-1034
- https://doi.org/10.1109/3.27996
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
- OMVPE growth of InGaAsP materials for long wavelength detectors and emittersJournal of Crystal Growth, 1986
- Effects of growth temperature on optical and deep level spectroscopy of high-quality InP grown by metalorganic chemical vapor depositionJournal of Applied Physics, 1985
- An investigation of the deep level photoluminescence spectra of InP(Mn), InP(Fe), and of undoped InPJournal of Applied Physics, 1982
- Photoluminescence study of native defects in InPApplied Physics Letters, 1981
- Photoluminescence study of melt grown InPJournal of Applied Physics, 1981
- A model for the ∼ 1.10eV emission band in InPSolid State Communications, 1980
- Photoluminescence studies of vacancies and vacancy-impurity complexes in annealed GaAsJournal of Luminescence, 1975
- Indium PhosphideJournal of the Electrochemical Society, 1973
- Crystal growth and properties of group IV doped indium phosphideJournal of Crystal Growth, 1972
- Role of Oxygen in Reducing Silicon Contamination of GaAs during Crystal GrowthJournal of Applied Physics, 1963