Effects of growth temperature on optical and deep level spectroscopy of high-quality InP grown by metalorganic chemical vapor deposition
- 15 April 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (8), 2788-2792
- https://doi.org/10.1063/1.335423
Abstract
Deep level transient spectroscopy and photoluminescence were used to study the effect of growth temperature (TG=550–650 °C) on high-quality InP (ND−NA=1.5×1015 cm−3; μ77=41 000 cm2 V−1 s−1) grown by low pressure metalorganic chemical vapor deposition. A close relationship between deep levels and acceptor concentrations was found. Four electron traps were observed; not all of these traps have previously been observed in InP grown by metalorganic chemical vapor deposition. A metastable defect was detected in one of the samples.Keywords
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