The role of elevated temperatures in the implantation of GaAs
- 30 September 1975
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 18 (9), 733-736
- https://doi.org/10.1016/0038-1101(75)90149-5
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- Ion implantation of sulphur into GaAs, GaP and ge monocrystalsRadiation Effects, 1971
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- EFFICIENT DOPING OF GaAs BY Se+ ION IMPLANTATIONApplied Physics Letters, 1969