Study of silicon contamination and near-surface damage caused by CF4/H2 reactive ion etching
- 15 August 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (4), 420-422
- https://doi.org/10.1063/1.95243
Abstract
Silicon surfaces which had been exposed to a CF4 /H2 plasma have been characterized by x‐ray photoelectron spectroscopy, ellipsometry, He ion channeling, and H profiling techniques. Plasma exposure leads to the deposition of a thin (∼30 Å thick) C,F‐polymeric layer. Hydrogen and/or damage (displaced Si atoms) can be detected in the near‐surface region up to a depth in excess of 400 Å from the Si surface.Keywords
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