State-selective measurements and calculations of dielectronic recombination with Li-like N4+, F6+, and Si11+ ions

Abstract
Absolute measurements and calculations of the rate coefficient 〈νσ〉 for dielectronic recombination associated with Li-like ions of nitrogen, fluorine, and silicon are reported. The measurements were performed with a single-pass merged-beam technique. The excitation associated with the dielectronic recombination reaction is 2s→2p. With the present energy resolution, we are able to distinguish between capture into low-lying resonances, which are insensitive to perturbing fields, and capture into the high Rydberg states, which are perturbed by small electric fields present in the experiment. The experimental data are compared with distorted-wave calculations that include the influence of static electric fields in the interaction region.