SF 6 Plasma Etching of Silicon: Evidence of Sequential Multilayer Fluorine Adsorption
- 1 November 1987
- journal article
- Published by IOP Publishing in Europhysics Letters
- Vol. 4 (9), 1049-1054
- https://doi.org/10.1209/0295-5075/4/9/016
Abstract
It is shown, from the diffusion model for fluorine-based plasma etching of silicon, how the anisotropy evolution, as a function of the partial pressure of atomic fluorine, may account for adsorption and desorption mechanisms on silicon surfaces. In addition to the anisotropy-isotropy transition, sequential multilayer adsorption is demonstrated experimentally. Etching mechanisms are discussed in the light of the observed results.Keywords
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