A model for the halogen-based plasma etching of silicon
- 14 July 1987
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 20 (7), 858-869
- https://doi.org/10.1088/0022-3727/20/7/007
Abstract
The different models for the spontaneous and plasma etching of silicon are compared with the experimental results and discussed. A detailed study is particularly made of the consequences of ion bombardment on the etching kinetics and its effects observed during etching. The respective contributions of each model are dealt with in a final synthesis.Keywords
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