Evidence for an intrinsic intergap surface state on GaSb(110) by high-resolution angle-resolved photoemission
- 9 February 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 58 (6), 610-613
- https://doi.org/10.1103/physrevlett.58.610
Abstract
An intrinsic intergap surface state associated with the occupied dangling-bond state is found on high-quality cleaved, p-type GaSb(110) surfaces. This conclusion is derived from a high precision analysis of angle-resolved photoemission data taken with high energy and momentum resolution as well as high absolute accuracy with synchrotron and He?ize -2 roman I— radiation. Thus GaSb is besides GaP the second exception to the accepted rule that III-V’s do not have such states.Keywords
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