Tunneling Current in InGaAs and Optimum Design for InGaAs/InP Avalanche Photodiode
- 1 June 1980
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 19 (6), L277
- https://doi.org/10.1143/jjap.19.l277
Abstract
Breakdown voltage and dark current density in p+n and n+p In0.53Ga0.47As diodes are compared with theoretical values taking the backward tunneling current into account. Predominant origin of dark current in an InGaAs diode is attributed to the tunneling current. Using these results, optimum design of an InGaAs/InP avalanche photodiode (APD) to obtain low dark current, high multiplication gain, high quantum efficiency and fast response is also discussed.Keywords
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