Impurity-peak formation during proton-enhanced diffusion of phosphorus and boron in silicon

Abstract

The formation of a phosphorus or boron impurity peak in silicon has been observed following irradiation with monoenergetic protons. In this study we used a sample temperature of 700 °C, proton‐beam energies of 50–140 keV, proton‐beam current densities of ∼1 μA/cm², and proton‐bombardment times of 3 min to 3 h. The resultant impurity profiles were obtained using Schottky‐barrier differential C‐V techniques.