Impurity-peak formation during proton-enhanced diffusion of phosphorus and boron in silicon
- 1 February 1979
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (2), 777-782
- https://doi.org/10.1063/1.326044
Abstract
The formation of a phosphorus or boron impurity peak in silicon has been observed following irradiation with monoenergetic protons. In this study we used a sample temperature of 700 °C, proton‐beam energies of 50–140 keV, proton‐beam current densities of ∼1 μA/cm2, and proton‐bombardment times of 3 min to 3 h. The resultant impurity profiles were obtained using Schottky‐barrier differential C‐V techniques.Keywords
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