Epitaxial growth of high-mobility GaAs using tertiarybutylarsine and triethylgallium
- 29 January 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (5), 478-480
- https://doi.org/10.1063/1.102771
Abstract
Epitaxial layers of nominally undoped GaAs have been grown by metalorganic chemical vapor deposition using liquid tertiarybutylarsine and triethylgallium. n-type layers were obtained having total residual shallow acceptor concentrations of ∼1013 cm−3 and Hall mobilities comparable to those obtained with arsine and triethylgallium in the same reactor. Liquid-nitrogen Hall mobilities up to 116 000 cm2 /V s were observed.Keywords
This publication has 17 references indexed in Scilit:
- GaAs p-i-n photodiodes made by metalorganic chemical vapor deposition using tertiarybutylarsine and arsineApplied Physics Letters, 1989
- MOVPE Growth of Selectively Doped AlGaAs/GaAs Heterostructures with TertiarybutylarsineJapanese Journal of Applied Physics, 1989
- Metalorganic chemical vapor deposition of high-purity GaAs using tertiarybutylarsineApplied Physics Letters, 1989
- Tertiary butylarsine grown GaAs solar cellApplied Physics Letters, 1989
- Metalorganic Chemical Vapor Deposition of High Quality GaAs and AlGaAs Using TertiarybutylarsineMRS Proceedings, 1989
- Control of residual impurities in very high purity GaAs grown by organometallic vapor phase epitaxyApplied Physics Letters, 1988
- Use of tertiarybutylarsine in the metalorganic chemical vapor deposition growth of GaAsApplied Physics Letters, 1987
- Use of tertiarybutylarsine for GaAs growthApplied Physics Letters, 1987
- Reduction of background doping in metalorganic vapor phase epitaxy of GaAs using triethylgallium at low reactor pressuresApplied Physics Letters, 1985
- Reduced pressure MOVPE growth and characterization of GaAs/GaAlAs heterostructures using a triethylgallium sourceJournal of Crystal Growth, 1984