MOVPE Growth of Selectively Doped AlGaAs/GaAs Heterostructures with Tertiarybutylarsine
- 1 June 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (6A), L901
- https://doi.org/10.1143/jjap.28.l901
Abstract
We have used tertiarybutylarsine (tBAs) as a source alternative to AsH3 in the metalorganic vapor phase epitaxy (MOVPE) of selectively doped AlGaAs/GaAs heterostructures. A sheet carrier concentration of 9.2×1011 cm-2 and an electron mobility of 52000 cm2·V-1·s-1 have been obtained at 77 K for a heterostructure with a 5 nm spacer layer. This is, to our knowledge, the first demonstrated fabrication of two-dimensional electron gas with an alternative As source.Keywords
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