Metalorganic chemical vapor deposition of high-purity GaAs using tertiarybutylarsine
- 15 May 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (20), 2029-2031
- https://doi.org/10.1063/1.101182
Abstract
The growth of high-purity gallium arsenide using tertiarybutylarsine (TBA) and trimethylgallium is reported. The availability of high-purity TBA has permitted the growth of material with liquid-nitrogen mobilities of up to 80 000 cm2/V s, the highest value yet reported for growth with any alkyl arsine. The residual donor species have been identified by magnetophotoluminescence.Keywords
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