Strain relief in compositionally graded InAsxSb1−x buffer layers and InAsxSb1−x/InSb strained-layer superlattices grown by MOCVD
- 1 September 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 91 (4), 515-526
- https://doi.org/10.1016/0022-0248(88)90119-4
Abstract
No abstract availableKeywords
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