Chemical and physical limits on the performance of metal silicate high-k gate dielectrics
- 1 July 2001
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 41 (7), 937-945
- https://doi.org/10.1016/s0026-2714(01)00046-4
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Spectroscopic evidence for a network structure in plasma-deposited Ta[sub 2]O[sub 5] films for microelectronic applicationsAIP Conference Proceedings, 2001
- The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO/sub 2/ interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealingIEEE Transactions on Electron Devices, 2000
- 1.6 nm oxide equivalent gate dielectrics using nitride/oxide (N/O) composites prepared by RPECVD/oxidation processIEEE Electron Device Letters, 2000
- Monolayer-level controlled incorporation of nitrogen in ultrathin gate dielectrics using remote plasma processing: Formation of stacked “N–O–N” gate dielectricsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999
- Monolayer-level controlled incorporation of nitrogen at Si–SiO2 interfaces using remote plasma processingJournal of Vacuum Science & Technology A, 1999
- Electrical properties of hafnium silicate gate dielectrics deposited directly on siliconApplied Physics Letters, 1999
- Ultrathin nitrided gate dielectrics: Plasma processing, chemical characterization, performance, and reliabilityIBM Journal of Research and Development, 1999
- Schottky barrier heights of tantalum oxide, barium strontium titanate, lead titanate, and strontium bismuth tantalateApplied Physics Letters, 1999
- Low-temperature preparation of SiO2/Si(100) interfaces using a two-step remote plasma-assisted oxidation-deposition processApplied Physics Letters, 1992
- Substrate temperature dependence of subcutaneous oxidation at Si/SiO2 interfaces formed by remote plasma-enhanced chemical vapor depositionJournal of Vacuum Science & Technology A, 1990