Low-temperature preparation of SiO2/Si(100) interfaces using a two-step remote plasma-assisted oxidation-deposition process
- 27 January 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (4), 434-436
- https://doi.org/10.1063/1.106626
Abstract
SiO2/Si(100) interfaces have been prepared by a low‐temperature, 200–300 °C, remote plasma‐assisted oxidation‐deposition process. The oxidation: (i) creates ∼0.5 nm of SiO2; (ii) removes residual C from an otherwise H‐terminated Si surface; and (iii) produces a SiO2/Si interface with a midgap trap density of ∼1×1010 cm−2 eV−1, and when combined with remote plasma‐enhanced chemical vapor deposition (RPECVD) of SiO2, (iv) forms a SiO2/Si structure with properties comparable to those prepared by thermal oxidation of Si at 850–1050 °C.Keywords
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