Semiconductor analysis with a channeled helium microbeam
- 31 December 1981
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 191 (1-3), 521-526
- https://doi.org/10.1016/0029-554x(81)91055-7
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- The application of low angle Rutherford backscattering and channelling techniques to determine implantation induced disorder profile distributions in semiconductorsNuclear Instruments and Methods, 1980
- The Melbourne proton microprobeJournal of Microscopy, 1979
- The production and use of a nuclear microprobe of ions at MeV energiesNuclear Instruments and Methods, 1979
- The nuclear microprobe as an analytical toolJournal of Radioanalytical and Nuclear Chemistry, 1979
- On the determination of optimum depth-resolution conditions for rutherford backscattering analysisNuclear Instruments and Methods, 1978
- Solid-phase epitaxy of implanted silicon by cw Ar ion laser irradiationApplied Physics Letters, 1978
- Color‐Band Generation during the High Dose Ion Implantation of Silicon WafersJournal of the Electrochemical Society, 1978
- The application of high-resolution Rutherford backscattering techniques to near-surface analysisNuclear Instruments and Methods, 1978