Dissociation of PtSi, NiSi and PdGe in presence of Pt, Ni and Pd films, respectively
- 1 March 1979
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 18 (3), 285-289
- https://doi.org/10.1007/bf00885516
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Growth kinetics of Pd2Ge and PdGe on single-crystal and evaporated germaniumThin Solid Films, 1977
- Pt2Si and PtSi formation with high-purity Pt thin filmsApplied Physics Letters, 1977
- Effect of a glassy membrane on the Schottky barrier between silicon and metallic silicidesJournal of Vacuum Science and Technology, 1977
- Influence of the nature of the Si substrate on nickel silicide formed from thin Ni filmsThin Solid Films, 1976
- Selective growth of metal-rich silicide of near-noble metalsApplied Physics Letters, 1975
- Evaluation of glancing angle X-ray diffraction and MeV 4He backscattering analyses of silicide formationThin Solid Films, 1974
- Analysis of thin-film structures with nuclear backscattering and x-ray diffractionJournal of Vacuum Science and Technology, 1974
- Characterization of silicon metallization systems using energetic ion backscatteringProceedings of the IEEE, 1974
- Principles and applications of ion beam techniques for the analysis of solids and thin filmsThin Solid Films, 1973