Mid-wave infrared HgCdTe nBn photodetector
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- 16 April 2012
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 100 (16)
- https://doi.org/10.1063/1.4704359
Abstract
A unipolar, barrier-integrated HgCdTe nBn photodetector with all n-type doping and a type-I band lineup is experimentally demonstrated. Planar mid-wave infrared (MWIR) nBn devices exhibit current-voltage (I-V) characteristics that are consistent with band inversion in reverse bias, indicating a barrier-influenced behavior. Dark current saturation is observed beyond a reverse bias of approximately −0.8 V. Bias-dependent photoresponse is observed in the mid-wave infrared with a cut-off wavelength around 5.7 μm. Numerical modeling based on experimental results predicts an internal peak quantum efficiency of approximately 66%.Keywords
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