Thermal stability and growth kinetics of Co2Si and CoSi in thin-film reactions
- 1 June 1982
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (6), 4406-4410
- https://doi.org/10.1063/1.331223
Abstract
We have investigated the growth of Co2Si and CoSi around 400 °C in samples of Si/Co and Si/CoSi/Co. We selected the Co‐Si system because CoSi is known to have a larger heat of formation than Co2Si, hence the former should be favorable for formation from the viewpoint of free energy change or driving force. However, we found that Co2Si is the one which always grows first. This leads us to conclude that it is not the driving force but rather the kinetics which governs the selective growth of thin‐film intermetallic compounds. Thus, we propose here that the first phase formation is selected by the one with the lowest kinetic barrier.Keywords
This publication has 11 references indexed in Scilit:
- Growth kinetics of planar binary diffusion couples: ’’Thin-film case’’ versus ’’bulk cases’’Journal of Applied Physics, 1982
- Gold-aluminum thin-film interactions and compound formationJournal of Applied Physics, 1981
- Review of binary alloy formation by thin film interactionsJournal of Vacuum Science and Technology, 1979
- Dissociation of PtSi, NiSi and PdGe in presence of Pt, Ni and Pd films, respectivelyApplied Physics A, 1979
- Interactions in the Co/Si thin-film system. I. KineticsJournal of Applied Physics, 1978
- Influence of the nature of the Si substrate on nickel silicide formed from thin Ni filmsThin Solid Films, 1976
- Cobalt silicide layers on Si. I. Structure and growthJournal of Applied Physics, 1975
- Selective growth of metal-rich silicide of near-noble metalsApplied Physics Letters, 1975
- Structure and growth kinetics of Ni2Si on siliconThin Solid Films, 1975
- The evaluation of data obtained with diffusion couples of binary single-phase and multiphase systemsActa Metallurgica, 1969