Interactions in the Co/Si thin-film system. I. Kinetics
- 1 July 1978
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (7), 4005-4010
- https://doi.org/10.1063/1.325359
Abstract
Interactions in the Co/Si thin‐film system were investigated by MeV backscattering and x‐ray‐diffraction techniques. It was found that Si diffuses through the Co layer and accumulates at the sample surface at about 300 °C. Increasing the temperature causes the growth of the Co2Si phase, followed by the simultaneous growth of the CoSi phase. The growth rates for both phases have a square root of time dependence. The activation energies of growth are 1.5 and 1.9 eV for the Co2Si and CoSi phase, respectively. A model for the growth of multiple phases is suggested. The transformation between CoSi2 and CoSi is found to be a reversible reaction.Keywords
This publication has 13 references indexed in Scilit:
- Interactions in the Co/Si thin-film system. II. Diffusion-marker experimentsJournal of Applied Physics, 1978
- Silicide formation in Ni-Si Schottky barrier diodesJournal of Physics D: Applied Physics, 1976
- Cobalt silicide layers on Si. I. Structure and growthJournal of Applied Physics, 1975
- Selective growth of metal-rich silicide of near-noble metalsApplied Physics Letters, 1975
- Iron silicide thin film formation at low temperaturesThin Solid Films, 1975
- Structure and growth kinetics of Ni2Si on siliconThin Solid Films, 1975
- Implanted noble gas atoms as diffusion markers in silicide formationThin Solid Films, 1975
- Evaluation of glancing angle X-ray diffraction and MeV 4He backscattering analyses of silicide formationThin Solid Films, 1974
- Kinetics and mechanism of platinum silicide formation on siliconApplied Physics Letters, 1974
- Principles and applications of ion beam techniques for the analysis of solids and thin filmsThin Solid Films, 1973