Chemical and Structural Characterization of Cu(In,Ga)Se2/Mo Interface in Cu(In,Ga)Se2 Solar Cells
- 1 October 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (10A), L1253
- https://doi.org/10.1143/jjap.35.l1253
Abstract
Interfaces between the Cu(In,Ga)Se2 (CIGS) absorber and the Mo back contact in CIGS solar cells were investigated by secondary ion mass spectroscopy (SIMS) and analytical transmission electron microscopy (TEM). The solar cell with MgF2/ITO/ZnO/CdS/CIGS/Mo/glass structure exhibited an efficiency of over 15%. In the SIMS depth profile, the Se intensity had a peak at the CIGS/Mo interface. Cross-sectional TEM observation showed that there were two layers at the interface. One was a MoSe2 layer and the other was an amorphous layer. The thickness of the interface layers depends on the deposition conditions of the Mo layers.Keywords
This publication has 10 references indexed in Scilit:
- Preparation of Device-Quality Cu(In, Ga)Se2 Thin Films Deposited by Coevaporation with Composition MonitorJapanese Journal of Applied Physics, 1995
- Accelerated publication 16.4% total‐area conversion efficiency thin‐film polycrystalline MgF2/ZnO/CdS/Cu(In,Ga)Se2/Mo solar cellProgress In Photovoltaics, 1994
- High-efficiency CuInxGa1−xSe2 solar cells made from (Inx,Ga1−x)2Se3 precursor filmsApplied Physics Letters, 1994
- Growth defects in CuInSe2 thin filmsJournal of Materials Research, 1994
- Fivefold multiply twinned crystallites in CuInSe2Applied Physics Letters, 1994
- ZnO/CdS/CuInSe2 thin-film solar cells with improved performanceApplied Physics Letters, 1993
- Microstructure of polycrystalline CuInSe2/Cd(Zn)S heterojunction solar cellsThin Solid Films, 1992
- CuInSe2 for photovoltaic applicationsJournal of Applied Physics, 1991
- Study of the CuInSe2/Mo thin film contact stabilityThin Solid Films, 1991
- A TEM study of the crystallography and defect structures of single crystal and polycrystalline copper indium diselenidePhilosophical Magazine A, 1991