Mechanism of ion dechanneling in compound semiconductor superlattices

Abstract

Computer simulations of channeling have been used to evaluate a model proposed by Saris et al. to explain some of their ion dechanneling measurements in InAs-GaSb superlattices. Their model, which involves slight offsets of atomic rows at each interface, produces much less dechanneling than observed experimentally. However, the simulations show that the observed dechanneling can be produced by much larger offsets which would probably be spread over several atomic layers near each interface.