Preparation of Efficient Electroluminescent Diodes from p-on-n Liquid-Phase Epitaxial Layers of GaP
- 1 May 1968
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 39 (6), 2747-2749
- https://doi.org/10.1063/1.1656665
Abstract
Efficient red‐emitting GaP diodes have been fabricated from p‐on‐n layers formed by liquid epitaxy in a closed‐tube system. The external quantum efficiency may increase by a factor of two to three after the diodes are heat‐treated.Keywords
This publication has 6 references indexed in Scilit:
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