Luminescence fatigue and light-induced electron spin resonance in amorphous silicon-hydrogen alloys
- 30 November 1982
- journal article
- Published by Elsevier in Solar Energy Materials
- Vol. 8 (1-3), 153-158
- https://doi.org/10.1016/0165-1633(82)90058-2
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Defect Creation by Optical Excitation in Hydrogenated Amorphous Silicon as Elucidated by Optically Detected Magnetic ResonanceJournal of the Physics Society Japan, 1982
- Time-Resolved Luminescence and Its Fatigue Effect in Hydrogenated Amorphous SiliconJournal of the Physics Society Japan, 1981
- Luminescence fatigue in amorphous solidsSolid State Communications, 1981
- Light-induced radiative recombination centers in hydrogenated amorphous siliconApplied Physics Letters, 1980
- New Evidence for Defect Creation by High Optical Excitation in Glow Discharge Amorphous SiliconJapanese Journal of Applied Physics, 1980
- Photoinduced Defects in Chalcogenide GlassesPhysical Review Letters, 1980
- Fatigue effect in luminescence of glow discharge amorphous silicon at low temperaturesSolid State Communications, 1980
- Excitation spectra of photoluminescence fatigue and creation of paramagnetic centers in amorphous GexSe1−xJournal of Non-Crystalline Solids, 1980
- Light-induced ESR quenching in a-SiJournal of Non-Crystalline Solids, 1980
- Study of localized states in amorphous semiconductor chalcogenides by radiative recombinationPhysica Status Solidi (a), 1974