Arsenic-doped p-CdTe layers grown by organometallic vapor phase epitaxy

Abstract

Arsenic‐doped CdTe layers have been grown by organometallic vapor phase epitaxy in an atmospheric pressure reactor using arsine as the dopant gas. Doping levels above 2×10¹⁷ cm⁻³ have been reproducibly obtained for the first time in an epitaxial growth system, with a doping uniformity of ±20% over 1.5×1.5 cm. This is a much higher level of doping than usually possible in bulk growth systems. The layers were characterized by photoluminescence measurements at 12 K and by Hall measurements as a function of temperature. The ionization energy of the As acceptor was found to be about 62±4 meV from transport measurements. It was also shown that the electronic activity of the As incorporated is a function of the dimethylcadmium to diethyltelluride partial pressure ratio in the gas phase.