Electronic subbands of aδdoping layer in GaAs in a parallel magnetic field

Abstract

The $B_{?}$ magnetoconductivity in the V-shaped potential well of δ-doped GaAs(Si) shows oscillatory behavior along the $B_{?}$ axis at constant $N_s$. At finite field $B_{?}$ the subband levels are raised by a diamagnetic energy shift and may be pushed over the Fermi level. Due to the formation of magnetoelectric subbands the E(k) dispersions are distorted. According to a self-consistent model calculation the features of σ($B_{?}$) are explained in terms of the oscillating density of states at the Fermi level.