p-type ZnSe homoepitaxial layers grown by molecular beam epitaxy with nitrogen radical doping

Abstract

We have grown high‐quality homoepitaxial layers of p‐type ZnSe for the first time. The layers were grown on dry‐etched ZnSe substrates by molecular‐beam epitaxy with nitrogen radical doping. The p‐type conduction with carrier concentration of 8.9×10¹⁵ cm⁻³ at 300 K was confirmed by Hall measurement. Low‐temperature photoluminescence from the N‐doped ZnSe layers was dominated by single acceptor‐bound exciton emission I₁ at 2.7931 eV, which indicates a formation of a number of shallow acceptors and strain free of the homoepitaxial layers.