Oxygen in silicon carbide: shallow donors and deep acceptors
- 1 July 1999
- journal article
- Published by Elsevier in Materials Science and Engineering B
- Vol. 61-62, 454-459
- https://doi.org/10.1016/s0921-5107(98)00554-6
Abstract
No abstract availableFunding Information
- Ministry of Education, Culture, Sports, Science and Technology
- Bundesministerium für Bildung und Forschung
- Deutsche Forschungsgemeinschaft (292)
- Bundesministerium für Bildung, Wissenschaft, Forschung und Technologie
This publication has 3 references indexed in Scilit:
- Oxygen-Related Defect Centers in 4H Silicon CarbideMaterials Science Forum, 1998
- Doping of SiC by Implantation of Boron and AluminumPhysica Status Solidi (a), 1997
- Step-Controlled Epitaxial Growth of High-Quality SiC LayersPhysica Status Solidi (b), 1997