Continuous Wave Operation at Room Temperature of InGaN Laser Diodes Fabricated on 4H-SiC Substrates

Abstract

We demonstrated continuous wave operation at room temperature of InGaN laser diodes fabricated on 4H-SiC substrates. The threshold current and voltage were 60 mA and 8.3 V, respectively. The threshold current corresponds to a threshold current density of 4 kA/cm². No difference in the threshold current or voltage was observed between 4H-SiC and 6H-SiC substrates. The laser oscillation was observed up to 80°C for CW operation. The peak lasing wavelength was 404.4 nm. The lifetime was 57 hours under automatic power controlled conditions with a constant output power of 1 mW at 25°C.