Low-threshold 1.25-μm vapor-grown InGaAsP cw lasers
- 15 February 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (4), 262-264
- https://doi.org/10.1063/1.90774
Abstract
Vapor‐grown double‐heterojunction lasers of InGaAsP/InP have been prepared with cw room‐temperature threshold currents of 85 mA and differential quantum efficiencies exceeding 50% at 1.25 μm. From several lasers, fundamentaal‐lateral‐ and fundamental‐longitudinal‐mode operation have been observed over moderate current ranges. Over 1000 h of room‐temperature cw operation has been observed to date without significant degradation.Keywords
This publication has 8 references indexed in Scilit:
- In1-xGaxAsyP1-y/InP DH lasers fabricated on InPIEEE Journal of Quantum Electronics, 1978
- Pulse delay measurements in the zero material dispersion wavelength region for optical fibersApplied Optics, 1977
- Variation of effective index of refraction in a double-heterojunction laser (In1−xGaxP1−zAsz)Journal of Applied Physics, 1977
- Room-temperature cw operation of buried-stripe double-heterostructure GaInAsP/InP diode lasersApplied Physics Letters, 1977
- cw room-temperature InxGa1−xAs/InyGa1−yP 1.06-μm lasersApplied Physics Letters, 1976
- Vapor-grown cw room-temperature GaAs/InyGa1−yP lasersApplied Physics Letters, 1976
- Room-temperature cw operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μ mApplied Physics Letters, 1976
- Thermal conductivity of silicon, germanium, III–V compounds and III–V alloysSolid-State Electronics, 1967